PN結的形成及其特性

應用物理學論文編號:WLX072  字數:7613,頁數:19

目    錄
摘    要 i
Abstract ii
第一章 緒論 1
1.1  研究動機與目的 1
1.2  論文內容概述 1
第二章 半導體的基礎知識 2
2.1  本征半導體 2
2.2  雜質半導體 2
2.3  半導體中的電流 4
第三章 PN結 6
3.1  PN結的形成 6
3.2  PN結的單向導電性 8
3.3  PN結的擊穿特性 10
3.4  PN結的電容特性 11
3.5  PN結的溫度特性 13
第四章 結論 14
致   謝 15
參考文獻 16

摘    要
 現在電子技術的不斷發展，半導體科學技術已成為現代最重要的科學技術之一。而作為大多數半導體器件的核心——PN結，也受到社會各界的關注和重視。當然PN結是構成半導體器件的基本單元，其中，最簡單的晶體二極管就是由PN結構成的。本文就PN結形成的物理機制來闡述PN結的單向導電性，擊穿特性，電容特性及溫度特性等。
關鍵詞: 半導體 漂移運動 擴散 自由載流子 PN結的形成

Abstract
 Now electron technology Unceasingly develops, semiconductor science and technology already becomes one of the most important science and technology in the modern times. PN junction is considered to be the core of great majority semiconductor devices, also, be caught the general public attention and be taken seriously. This text is to explain and discuss the forms and characteristic of      PN-junction. Certainly PN-junction forms the fundamental element of the semiconductor device, among them, the simplest crystal diode is made of PN junction . Therefore, studying the characteristic of PN-junction is to discuss the characteristic of crystal diode in fact. This text passes through the studying to crystal diode to expound on One-way conductivity.Breakdown of Characteristic capacitance characteristics, Temperature characteristics and so on of PN junction
Keywords: Semiconductor  Drift Movement  Proliferation  Free carrier  The forms of PN-junction