ABSTRACT
The Flat Panel Displays (FPDs) are rapidly developing in 21st century. Novel materials with the lower resistivity are required for contact electrodes of the FPDs to enhance the respond performance. Besides, Fabrication of the field-emitters of Field Emission Displays (FEDs) is too complex to step forward. The combination of conductive thin films and nanowires deposited on large area substrate by simple methods with low cost will solve the above problems.
In this thesis, the films and nanowires of titanium silicides were prepared on the substrate by atmosphere pressure chemical vapor deposition (APCVD), using SiH4 and TiCl4 as precursors. XRD, FESEM were employed to characterize structure and properties of the NWs/films, respectively. The phase formation in the NWs and CVD reaction were studied. The formation and growth of TiSi nanowires were also clarified, and successfully prepared nanowires on the respective film.
The results reveal that the deposition of the films is determined by CVD reaction between SiH4 and TiCl4.Via controlling the CVD reaction to promote the TiSi2 formation, the TiSi2 can be gained with the low resistivity. The mechanism of the films deposition is described as below: SiH4 and TiCl4 directly reacted in the vapor phase at first, and then the TiSi2 grains deposited on the substrate. The stack density of the TiSi2 crystalline phase gradually increased and the particles grew up. The films came to continuous and uniform, resulting in the low resistivity.
The TiSi crystalline nanowires/film structure were largely prepared on the substrate, and gained high quality TiSi nanowires on the film. The length of the nanowires is more than several micrometers with the orthorhombic structure, and the diameter is 20nm. The growth process may be the ‘vapor-solid’ (VS) growth mode, on the glass substrate under the Si, we also gained the same size TiSi nanowires. The substrate almost has nothing to do with the growth of the nanowires.
